参数项参数值
参数项参数值
Forward Transconductance - Min5.2 S
ConfigurationSingle
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current11 A
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time20 ns
Width4.6 mm
Rds On - Drain-Source Resistance450 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time6 ns
Height9.15 mm
Length10.4 mm
Mounting StyleThrough Hole
Package / CaseTO-220-3
Maximum Operating Temperature+ 150 C
PackagingTube
Minimum Operating Temperature- 65 C
Factory Pack Quantity1000
BrandSTMicroelectronics
Product TypeMOSFET
DescriptionMOSFET N-Ch 600 Volt 11 Amp
Channel ModeEnhancement
ImageSTMicroelectronics STP11NM60
SeriesSTP11NM60
ManufacturerSTMicroelectronics
Fall Time11 ns
Product CategoryMOSFET
RoHSIn Transition
Unit Weight0.079014 oz
SubcategoryMOSFETs
Pd - Power Dissipation160 W
Vds - Drain-Source Breakdown Voltage600 V
Number of Channels1 Channel
Rise Time20 ns
TypeMOSFET