参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage4 V
TechnologySi
Id - Continuous Drain Current14 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
PackagingTube
KRHTS8541299000
Typical Turn-On Delay Time19 ns
Minimum Operating Temperature- 55 C
Factory Pack Quantity1000
JPHTS8541290100
ManufacturerSTMicroelectronics
CAHTS8541290000
Rds On - Drain-Source Resistance300 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time44 ns
Package / CaseTO-220-3
BrandSTMicroelectronics
TARIC8541210000
Maximum Operating Temperature+ 150 C
Mounting StyleThrough Hole
RoHS Details
ImageSTMicroelectronics STF15N80K5
Qg - Gate Charge32 nC
SubcategoryMOSFETs
Product CategoryMOSFET
DescriptionMOSFET N-Ch 800V 0.3Ohm 14A pwr MOSFET
MXHTS85412101
Product TypeMOSFET
USHTS8541290075
Channel ModeEnhancement
Unit Weight0.011640 oz
Fall Time10 ns
CNHTS8541210000
Pd - Power Dissipation35 W
TradenameMDmesh
Vds - Drain-Source Breakdown Voltage800 V
Number of Channels1 Channel
Rise Time17.6 ns