参数项参数值
参数项参数值
Forward Transconductance - Min20 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Id - Continuous Drain Current80 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time25 ns
Rds On - Drain-Source Resistance11 mOhms
Transistor Type1 N-Channel Power MOSFET
Typical Turn-Off Delay Time66 ns
Width4.6 mm
Height9.3 mm
Length10.4 mm
MXHTS85412101
KRHTS8541299000
Qg - Gate Charge117 nC
Package / CaseTO-220-3
Mounting StyleThrough Hole
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
Maximum Operating Temperature+ 175 C
Channel ModeEnhancement
CNHTS8541210000
Fall Time30 ns
PackagingTube
TARIC8541210000
ImageSTMicroelectronics STP75NF75FP
Unit Weight0.011640 oz
Factory Pack Quantity1000
SeriesSTP75NF75FP
BrandSTMicroelectronics
Pd - Power Dissipation45 W
Product TypeMOSFET
Product CategoryMOSFET
ManufacturerSTMicroelectronics
SubcategoryMOSFETs
Vds - Drain-Source Breakdown Voltage75 V
USHTS8541290095
TradenameSTripFET
Number of Channels1 Channel
Rise Time100 ns
Moisture Sensitivity Level1 (Unlimited)