参数项参数值
参数项参数值
DC Current Gain hFE Max160 at 10 mA, 2 V
Gain Bandwidth Product fT235 MHz
Collector- Base Voltage VCBO60 V
Maximum DC Collector Current6 A
Collector- Emitter Voltage VCEO Max15 V
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO7 V
Width1.4 mm
Height1 mm
DC Collector/Base Gain hfe Min160 at 10 mA, 2 V, 200 at 500 mA, 2 V, 190 at 3 A, 2 V, 150 at 6 A, 2 V
MXHTS85412999
Length3.05 mm
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
PackagingCut Tape
PackagingReel
PackagingMouseReel
TARIC8541290000
ImageDiodes Incorporated ZXTN23015CFHTA
RoHS Details
SeriesZXTN230
SubcategoryTransistors
Factory Pack Quantity3000
Product CategoryBipolar Transistors - BJT
BrandDiodes Incorporated
Unit Weight0.000282 oz
Product TypeBJTs - Bipolar Transistors
ManufacturerDiodes Incorporated
USHTS8541290095
Pd - Power Dissipation1810 mW