参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Vgs th - Gate-Source Threshold Voltage4 V
Transistor PolarityN-Channel
Id - Continuous Drain Current84 A
KRHTS8541299000
Vgs - Gate-Source Voltage- 25 V, + 25 V
Minimum Operating Temperature- 55 C
JPHTS8541290100
CAHTS8541290000
Rds On - Drain-Source Resistance24 mOhms
Transistor Type1 N-Channel
Maximum Operating Temperature+ 150 C
ImageSTMicroelectronics STWA88N65M5
Package / CaseTO-247-3
PackagingTube
SubcategoryMOSFETs
BrandSTMicroelectronics
TARIC8541290000
Mounting StyleThrough Hole
Product CategoryMOSFET
ManufacturerSTMicroelectronics
DescriptionMOSFET N-Ch 650 V 0.024 Ohm 84 A MDmesh(TM)
Factory Pack Quantity600
Qg - Gate Charge240 nC
MXHTS85412999
RoHS Details
SeriesMdmesh M5
Product TypeMOSFET
USHTS8541290095
Channel ModeEnhancement
Fall Time29 ns
Unit Weight1.340411 oz
CNHTS8541210000
Pd - Power Dissipation450 W
TradenameMDmesh
Vds - Drain-Source Breakdown Voltage650 V
Number of Channels1 Channel
Rise Time16 ns