参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current3 A
KRHTS8541299000
Vgs - Gate-Source Voltage- 30 V, + 30 V
JPHTS8541290100
Height6.2 mm
CAHTS8541290000
Length6.6 mm
Minimum Operating Temperature- 55 C
Typical Turn-On Delay Time13 ns
Product CategoryMOSFET
ImageSTMicroelectronics STD4NK80Z-1
Rds On - Drain-Source Resistance3.5 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time35 ns
Maximum Operating Temperature+ 150 C
Package / CaseTO-251-3
PackagingTube
DescriptionMOSFET N-Ch, 800V-3ohms Zener SuperMESH 3A
Width2.4 mm
Mounting StyleThrough Hole
TARIC8541210000
ManufacturerSTMicroelectronics
BrandSTMicroelectronics
Product TypeMOSFET
Qg - Gate Charge22.5 nC
Factory Pack Quantity3000
MXHTS85412101
RoHS Details
SubcategoryMOSFETs
SeriesSTD4NK80Z
USHTS8541290075
Channel ModeEnhancement
Fall Time32 ns
Unit Weight0.139332 oz
CNHTS8541210000
Pd - Power Dissipation80 W
Vds - Drain-Source Breakdown Voltage800 V
Number of Channels1 Channel
Rise Time12 ns