参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min13 S
TechnologySi
Vgs th - Gate-Source Threshold Voltage4 V
Transistor PolarityN-Channel
Id - Continuous Drain Current18 A
KRHTS8541299000
Vgs - Gate-Source Voltage- 20 V, + 20 V
JPHTS8541290100
Height9.3 mm
CAHTS8541290000
Length10.4 mm
Minimum Operating Temperature- 55 C
Typical Turn-On Delay Time15 ns
Product CategoryMOSFET
ImageSTMicroelectronics STF20NF20
Rds On - Drain-Source Resistance125 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time40 ns
Maximum Operating Temperature+ 175 C
Package / CaseTO-220-3
PackagingTube
DescriptionMOSFET Low charge STripFET
Width4.6 mm
Mounting StyleThrough Hole
TARIC8541210000
ManufacturerSTMicroelectronics
BrandSTMicroelectronics
Product TypeMOSFET
Qg - Gate Charge28 nC
Factory Pack Quantity1000
MXHTS85412101
RoHS Details
SubcategoryMOSFETs
SeriesSTF20NF20
USHTS8541290095
Channel ModeEnhancement
Fall Time10 ns
Unit Weight0.011640 oz
CNHTS8541210000
Pd - Power Dissipation90 W
TradenameSTripFET
Vds - Drain-Source Breakdown Voltage200 V
Number of Channels1 Channel
Rise Time30 ns