参数项参数值
参数项参数值
Gain Bandwidth Product fT300 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current200 mA
Collector- Emitter Voltage VCEO Max45 V
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Width1.35 mm
Collector-Emitter Saturation Voltage600 mV
Height1 mm
Length2.2 mm
MXHTS85412101
KRHTS8541219000
Mounting StyleSMD/SMT
Package / CaseSOT-323-3
JPHTS8541210101
CAHTS8541210000
PackagingReel
PackagingCut Tape
PackagingMouseReel
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 65 C
CNHTS8541210000
Factory Pack Quantity3000
BrandDiodes Incorporated
SeriesBC847A
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT NPN BIPOLAR
ImageDiodes Incorporated BC847AW-7-F
TARIC8541210000
ManufacturerDiodes Incorporated
Product CategoryBipolar Transistors - BJT
RoHS Details
Unit Weight0.000176 oz
SubcategoryTransistors
Pd - Power Dissipation200 mW
USHTS8541210095