参数项参数值
参数项参数值
Forward Transconductance - Min31 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.9 V
TechnologySi
Id - Continuous Drain Current15 A
Transistor PolarityN-Channel
Width3.9 mm
Rds On - Drain-Source Resistance8 mOhms
Transistor Type1 N-Channel
Height1.75 mm
Qg - Gate Charge40 nC
Mounting StyleSMD/SMT
Package / CaseSO-8
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
Factory Pack Quantity4000
BrandInfineon / IR
ManufacturerInfineon
Product CategoryMOSFET
RoHS Details
DescriptionMOSFET MOSFT 12V 15A 8mOhm 26nC
ImageInfineon / IR IRF7476TRPBF
Fall Time8.3 ns
Product TypeMOSFET
SubcategoryMOSFETs
Unit Weight0.019048 oz
Pd - Power Dissipation2.5 W
Vds - Drain-Source Breakdown Voltage12 V
Number of Channels1 Channel
Rise Time29 ns