参数项参数值
参数项参数值
DC Current Gain hFE Max475
Gain Bandwidth Product fT200 MHz
ConfigurationSingle
Collector- Base Voltage VCBO- 50 V
Collector- Emitter Voltage VCEO Max- 45 V
Continuous Collector Current- 100 mA
KRHTS8541299000
TechnologySi
Transistor PolarityPNP
Minimum Operating Temperature- 65 C
JPHTS8541290100
Emitter- Base Voltage VEBO- 5 V
CAHTS8541290000
QualificationAEC-Q101
ImageDiodes Incorporated AC857BQ-7
DescriptionBipolar Transistors - BJT General Purpose Transistor
Collector-Emitter Saturation Voltage- 650 mV
PackagingCut Tape
PackagingReel
Maximum Operating Temperature+ 150 C
Product CategoryBipolar Transistors - BJT
Factory Pack Quantity3000
Mounting StyleSMD/SMT
BrandDiodes Incorporated
Product TypeBJTs - Bipolar Transistors
ManufacturerDiodes Incorporated
RoHS Details
TARIC8541210000
MXHTS85412999
SubcategoryTransistors
USHTS8541210095
Unit Weight0.846575 oz
CNHTS8541290000
Pd - Power Dissipation350 mW