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IPD60R650CEAUMA1
厂牌：Infineon(英飞凌)
包装：--
类目：元器件 > 分立器件 > MOSFET
编号：B000049275564
描述：Trans MOSFET N-CH 600V 9.9A 3-Pin(2+Tab) DPAK T/R
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.5 V
TechnologySi
Id - Continuous Drain Current9.9 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time10 ns
Rds On - Drain-Source Resistance540 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time58 ns
Width6.22 mm
Height2.3 mm
Length6.5 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge20.5 nC
Moisture SensitiveYes
Package / CaseTO-252-3
Mounting StyleSMD/SMT
JPHTS8541290100
Minimum Operating Temperature- 40 C
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
CNHTS8541290000
Fall Time11 ns
PackagingReel
PackagingMouseReel
PackagingCut Tape
TARIC8541290000
RoHS Details
ImageInfineon Technologies IPD60R650CEAUMA1
Unit Weight0.011993 oz
SeriesCoolMOS CE
Factory Pack Quantity2500
BrandInfineon Technologies
Pd - Power Dissipation82 W
Product TypeMOSFET
Part # AliasesIPD60R650CE SP001396884
Product CategoryMOSFET
ManufacturerInfineon
SubcategoryMOSFETs
DescriptionMOSFET CONSUMER
Vds - Drain-Source Breakdown Voltage600 V
USHTS8541290095
TradenameCoolMOS
Number of Channels1 Channel
Rise Time8 ns