参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage- 4 V
TechnologySi
Id - Continuous Drain Current2.3 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 12 V, + 12 V
Width1.5 mm
Height1.1 mm
Rds On - Drain-Source Resistance200 mOhms
Transistor Type1 P-Channel
MXHTS85412999
Length3 mm
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Package / CaseTSOP-6
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
RoHS Details
ImageInfineon / IR IRLMS6702TRPBF
Channel ModeEnhancement
SubcategoryMOSFETs
BrandInfineon / IR
Factory Pack Quantity3000
Unit Weight0.000705 oz
Product TypeMOSFET
Product CategoryMOSFET
DescriptionMOSFET MOSFT P-Ch -2.3A 200mOhm 5.8nC LogLvl
ManufacturerInfineon
USHTS8541290095
Pd - Power Dissipation1.7 W
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel