参数项参数值
参数项参数值
Forward Transconductance - Min140 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage800 mV
TechnologySi
Id - Continuous Drain Current40 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 12 V, + 12 V
Typical Turn-On Delay Time9.1 ns
Width3.3 mm
Rds On - Drain-Source Resistance3.5 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time65 ns
Height1.05 mm
Length3.3 mm
Qg - Gate Charge41 nC
Mounting StyleSMD/SMT
Package / CasePQFN-8
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingMouseReel
PackagingCut Tape
PackagingReel
BrandInfineon / IR
Factory Pack Quantity4000
ManufacturerInfineon
Channel ModeEnhancement
Product CategoryMOSFET
RoHS Details
DescriptionMOSFET 30V 1 N-CH HEXFET 3.5mOhms 41nC
ImageInfineon / IR IRLHM630TRPBF
Fall Time43 ns
Product TypeMOSFET
SubcategoryMOSFETs
Unit Weight0.025609 oz
Pd - Power Dissipation2.7 W
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time32 ns