参数项参数值
参数项参数值
Forward Transconductance - Min13 S
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage1.2 V
TechnologySi
Id - Continuous Drain Current5.4 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 12 V, + 12 V
Typical Turn-On Delay Time8.5 ns
Width3 mm
Height1.11 mm
Rds On - Drain-Source Resistance45 mOhms
Transistor Type2 N-Channel
Typical Turn-Off Delay Time36 ns
MXHTS85412999
Length3 mm
KRHTS8541299000
JPHTS8541290100
Qg - Gate Charge18 nC
CAHTS8541290000
Minimum Operating Temperature- 55 C
Package / CaseMicro-8
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
ImageInfineon / IR IRF7530TRPBF
RoHS Details
Channel ModeEnhancement
Fall Time16 ns
SubcategoryMOSFETs
BrandInfineon / IR
Factory Pack Quantity4000
Unit Weight0.006258 oz
Product CategoryMOSFET
Product TypeMOSFET
DescriptionMOSFET MOSFT DUAL NCh 20V 5.4A Micro 8
ManufacturerInfineon
USHTS8541290095
Pd - Power Dissipation1.3 W
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels2 Channel
Rise Time11 ns
Moisture Sensitivity Level1 (Unlimited)