参数项参数值
参数项参数值
Forward Transconductance - Min80 mS
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current115 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time7 ns
Rds On - Drain-Source Resistance13.5 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time11 ns
MXHTS85412999
KRHTS8541219000
Mounting StyleSMD/SMT
Package / CaseSOT-523-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541210000
TARIC8541290000
RoHS Details
ImageDiodes Incorporated 2N7002TQ-7-F
SubcategoryMOSFETs
PackagingMouseReel
PackagingReel
PackagingCut Tape
Channel ModeEnhancement
BrandDiodes Incorporated
Series2N7002T
Product TypeMOSFET
Factory Pack Quantity3000
ManufacturerDiodes Incorporated
Unit Weight0.000071 oz
USHTS8541210095
Product CategoryMOSFET
DescriptionMOSFET 2N7002 Family
Pd - Power Dissipation150 mW
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Moisture Sensitivity Level1 (Unlimited)