参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current250 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Rds On - Drain-Source Resistance5 Ohms
Typical Turn-Off Delay Time5 ns
MXHTS85412999
Mounting StyleSMD/SMT
Qg - Gate Charge-
Package / CaseSOT-23-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541210000
TARIC8541290000
RoHS Details
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageDiodes Incorporated BS870Q-7-F
SubcategoryMOSFETs
Channel ModeEnhancement
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
Factory Pack Quantity3000
Product TypeMOSFET
Unit Weight0.001199 oz
USHTS8541290095
Product CategoryMOSFET
DescriptionMOSFET MOSFET BVDSS: 41V 60V SOT23 T&R 3K
Pd - Power Dissipation300 mW
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel