参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage4 V
TechnologySi
Id - Continuous Drain Current160 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Width5.31 mm
Height20.7 mm
Rds On - Drain-Source Resistance5.3 mOhms
Transistor Type1 N-Channel
MXHTS85412999
Length15.87 mm
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Mounting StyleThrough Hole
Qg - Gate Charge120 nC
Package / CaseTO-247-3
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
CNHTS8541210000
ImageInfineon Technologies IRFP1405PBF
PackagingTube
TARIC8541290000
RoHS Details
Channel ModeEnhancement
Factory Pack Quantity400
SubcategoryMOSFETs
BrandInfineon Technologies
Product CategoryMOSFET
Unit Weight1.340411 oz
DescriptionMOSFET MOSFT 55V 160A 5.3mOhm 120nCAC
ManufacturerInfineon
Product TypeMOSFET
USHTS8541290095
Pd - Power Dissipation310 W
Vds - Drain-Source Breakdown Voltage55 V
Number of Channels1 Channel
Rise Time160 ns