参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage- 1 V
TechnologySi
Transistor PolarityP-Channel
Id - Continuous Drain Current0.6 A
Vgs - Gate-Source Voltage- 6 V, + 6 V
Typical Turn-On Delay Time5.3 ns
Rds On - Drain-Source Resistance750 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time1247 ns
Minimum Operating Temperature- 55 C
Package / CaseSOT-323-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Qg - Gate Charge0.7 nC
PackagingCut Tape
PackagingReel
BrandDiodes Incorporated
Factory Pack Quantity3000
ImageDiodes Incorporated DMP2900UW-7
TARIC8541290000
ManufacturerDiodes Incorporated
Product TypeMOSFET
DescriptionMOSFET MOSFET BVDSS: 8V 24V SOT323 T&R 3K
Product CategoryMOSFET
SubcategoryMOSFETs
Channel ModeEnhancement
Fall Time445 ns
USHTS8541210095
Pd - Power Dissipation0.3 W
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel
Rise Time2.8 ns