参数项参数值
参数项参数值
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO50 V
ConfigurationSingle
Maximum DC Collector Current0.5 A
Collector- Emitter Voltage VCEO Max45 V
Continuous Collector Current0.5 A
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
QualificationAEC-Q101
Minimum Operating Temperature- 65 C
Collector-Emitter Saturation Voltage0.7 V
Package / CaseSOT-23-3
DC Collector/Base Gain hfe Min170
ImageDiodes Incorporated AC817-40Q-7
PackagingCut Tape
PackagingMouseReel
PackagingReel
SubcategoryTransistors
Maximum Operating Temperature+ 150 C
BrandDiodes Incorporated
TARIC8541210000
Mounting StyleSMD/SMT
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT 45V PNP SS Low Sat Transistor
ManufacturerDiodes Incorporated
Factory Pack Quantity3000
RoHS Details
Product TypeBJTs - Bipolar Transistors
USHTS8541210095
Unit Weight0.000282 oz
Pd - Power Dissipation350 mW