参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current6.7 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time3.8 ns
Width3.7 mm
Rds On - Drain-Source Resistance50 MOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time26.2 ns
Height1.65 mm
Length6.7 mm
Qg - Gate Charge20.4 nC
Mounting StyleSMD/SMT
Package / CaseSOT-223-3
PackagingCut Tape
PackagingReel
PackagingMouseReel
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Factory Pack Quantity1000
BrandDiodes Incorporated
SeriesZXMN6A25
Product TypeMOSFET
Channel ModeEnhancement
DescriptionMOSFET N-Chan 60V MOSFET (UMOS)
ManufacturerDiodes Incorporated
ImageDiodes Incorporated ZXMN6A25GTA
Product CategoryMOSFET
Fall Time10.6 ns
RoHS Details
Unit Weight0.003951 oz
SubcategoryMOSFETs
Pd - Power Dissipation3.9 W
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time4 ns