参数项参数值
参数项参数值
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage650 mV, 350 mV
TechnologySi
Id - Continuous Drain Current500 mA, 3.5 A
Transistor PolarityN-Channel, P-Channel
Vgs - Gate-Source Voltage- 8 V, + 8 V
CNHTS8541290000
Typical Turn-On Delay Time2.5 ns, 1.2 ns
MXHTS85412999
Rds On - Drain-Source Resistance4 Ohms, 100 mOhms
Typical Turn-Off Delay Time5.7 ns, 9.8 ns
KRHTS8541299000
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
Mounting StyleSMD/SMT
Package / CaseTSOT-26-6
Maximum Operating Temperature+ 150 C
PackagingMouseReel
PackagingReel
PackagingCut Tape
Qg - Gate Charge900 pC, 24.5 nC
BrandDiodes Incorporated
TARIC8541290000
ManufacturerDiodes Incorporated
Factory Pack Quantity3000
ImageDiodes Incorporated DMC25D1UVT-7
RoHS Details
Product CategoryMOSFET
SeriesDMC25
DescriptionMOSFET 20V Enh Mode FET
Product TypeMOSFET
SubcategoryMOSFETs
Channel ModeEnhancement
Fall Time4.3 ns, 6.5 ns
USHTS8541290095
Unit Weight1.375685 oz
Pd - Power Dissipation1.3 W
Vds - Drain-Source Breakdown Voltage25 V, 12 V
Number of Channels2 Channel
Rise Time1.4 ns, 2.7 ns