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商品参数
参数项参数值
参数项参数值
ConfigurationDual
TechnologySi
Id - Continuous Drain Current100 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time15 ns
Width1.2 mm
Rds On - Drain-Source Resistance7 Ohms
Transistor Type2 N-Channel
Typical Turn-Off Delay Time80 ns
Height0.5 mm
Length1.6 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Package / CaseSOT-563-6
JPHTS8541290100
CAHTS8541290000
CNHTS8541290000
ProductMOSFET Small Signal
TARIC8541290000
RoHS Details
PackagingCut Tape
PackagingMouseReel
PackagingReel
SubcategoryMOSFETs
ImageROHM Semiconductor EM6K1T2R
Channel ModeEnhancement
BrandROHM Semiconductor
Fall Time35 ns
SeriesEM6K1
Product TypeMOSFET
Factory Pack Quantity8000
ManufacturerROHM Semiconductor
Unit Weight0.000106 oz
USHTS8541290095
Product CategoryMOSFET
DescriptionMOSFET 2N-CH 30V .1A
Part # AliasesEM6K1
Pd - Power Dissipation150 mW
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels2 Channel
Rise Time35 ns
TypeMOSFET
Moisture Sensitivity Level1 (Unlimited)