参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current1.67 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time8 ns
Width3.7 mm
Height1.65 mm
Rds On - Drain-Source Resistance750 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time30 ns
MXHTS85412999
Length6.7 mm
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Qg - Gate Charge-
Mounting StyleSMD/SMT
Package / CaseSOT-223-3
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
ImageDiodes Incorporated ZVN4310GTA
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
Channel ModeEnhancement
Factory Pack Quantity1000
Fall Time16 ns
SeriesZVN4310
SubcategoryMOSFETs
Product CategoryMOSFET
DescriptionMOSFET N-Chnl 100V
BrandDiodes Incorporated
Unit Weight0.003951 oz
ManufacturerDiodes Incorporated
Product TypeMOSFET
USHTS8541290095
Pd - Power Dissipation3 W
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel
Rise Time25 ns
TypeFET