参数项参数值
参数项参数值
Gain Bandwidth Product fT220 MHz
Collector- Base Voltage VCBO80 V
Maximum DC Collector Current2 A
Collector- Emitter Voltage VCEO Max60 V
Continuous Collector Current1 A
ConfigurationDual
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
MXHTS85423901
CNHTS8542319000
Collector-Emitter Saturation Voltage60 mV
KRHTS8541219000
DC Collector/Base Gain hfe Min250 at 1 mA, 5 V
Minimum Operating Temperature- 55 C
JPHTS8542390990
CAHTS8541210000
Mounting StyleSMD/SMT
PackagingMouseReel
PackagingReel
PackagingCut Tape
Package / CaseSOT-26-6
Maximum Operating Temperature+ 150 C
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
TARIC8542399000
RoHS Details
SubcategoryTransistors
ImageDiodes Incorporated DSS4160DS-7
Factory Pack Quantity3000
SeriesDSS41
Product CategoryBipolar Transistors - BJT
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT NPN, NPN 60Vceo 1A 1.1W 200Hfe 150MHz
USHTS8542390001
Unit Weight0.000529 oz