参数项参数值
参数项参数值
Forward Transconductance - Min28 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current40 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time4.3 ns
Rds On - Drain-Source Resistance6.7 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time18 ns
Width5.15 mm
Height1.27 mm
Length5.9 mm
MXHTS85412999
Qg - Gate Charge27 nC
KRHTS8541299000
Package / CaseTDSON-8
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
Minimum Operating Temperature- 55 C
CAHTS8541290000
Fall Time2.4 ns
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
Unit Weight0.003986 oz
RoHS Details
Pd - Power Dissipation35 W
SeriesOptiMOS 3M
Part # AliasesBSC25N3MSGXT SP000311505 BSC025N03MSGATMA1
BrandInfineon Technologies
ImageInfineon Technologies BSC025N03MS G
Product TypeMOSFET
Factory Pack Quantity5000
SubcategoryMOSFETs
Vds - Drain-Source Breakdown Voltage30 V
ManufacturerInfineon
Number of Channels1 Channel
Product CategoryMOSFET
Rise Time3 ns
USHTS8541290095
TradenameOptiMOS
DescriptionMOSFET N-Ch 30V 100A TSDSON-8 OptiMOS 3M