参数项参数值
参数项参数值
Forward Transconductance - Min130 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.5 V
TechnologySi
Id - Continuous Drain Current185 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time13 ns
Rds On - Drain-Source Resistance1.4 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time29 ns
MXHTS85412999
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Qg - Gate Charge47 nC
Minimum Operating Temperature- 55 C
Mounting StyleSMD/SMT
Package / CaseSO-8
Maximum Operating Temperature+ 175 C
CNHTS8541290000
ImageON Semiconductor NTMFS5C430NT1G
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
RoHS Details
Channel ModeEnhancement
Fall Time8 ns
SubcategoryMOSFETs
Factory Pack Quantity1500
Product CategoryMOSFET
BrandON Semiconductor
Product TypeMOSFET
Unit Weight0.003781 oz
DescriptionMOSFET T6D3F 40V NFET
ManufacturerON Semiconductor
USHTS8541290095
Pd - Power Dissipation106 W
Vds - Drain-Source Breakdown Voltage40 V
Number of Channels1 Channel
Rise Time48 ns