STB47N60DM6AG

STB47N60DM6AG

厂牌：ST(意法半导体)

包装：--

类目：元器件 > 分立器件 > MOSFET

编号：B000049289591

描述：场效应管(MOSFET) STB47N60DM6AG D2PAK

商品参数

参数项参数值

参数项参数值

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage3 V

TechnologySi

Id - Continuous Drain Current36 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 25 V, + 25 V

QualificationAEC-Q101

Typical Turn-On Delay Time23 ns

Rds On - Drain-Source Resistance80 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time57 ns

Qg - Gate Charge55 nC

CNHTS8541290000

Package / CaseD2PAK-3

Mounting StyleSMD/SMT

Maximum Operating Temperature+ 150 C

Minimum Operating Temperature- 55 C

Channel ModeEnhancement

PackagingCut Tape

PackagingReel

Fall Time9 ns

TARIC8541290000

RoHS Details

SeriesSTB47N60DM6AG

BrandSTMicroelectronics

Unit Weight0.048678 oz

Product TypeMOSFET

Factory Pack Quantity1000

Product CategoryMOSFET

SubcategoryMOSFETs

ManufacturerSTMicroelectronics

Pd - Power Dissipation250 W

DescriptionMOSFET PTD HIGH VOLTAGE

USHTS8541290095

Vds - Drain-Source Breakdown Voltage600 V

TradenameMDmesh

Number of Channels1 Channel

Rise Time5.5 ns