参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage4.5 V
TechnologySi
Id - Continuous Drain Current70 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time19 ns
Rds On - Drain-Source Resistance10 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time36 ns
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge45 nC
Mounting StyleSMD/SMT
Package / CaseTO-252-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
PackagingMouseReel
PackagingReel
PackagingCut Tape
Factory Pack Quantity2500
CNHTS8541290000
BrandSTMicroelectronics
ManufacturerSTMicroelectronics
SeriesSTD80N10F7
Channel ModeEnhancement
TARIC8541290000
Product CategoryMOSFET
DescriptionMOSFET N-Ch 100V 0.0085Ohm typ 70A STripFET VII
ImageSTMicroelectronics STD80N10F7
Fall Time13 ns
RoHS Details
Product TypeMOSFET
SubcategoryMOSFETs
Unit Weight0.139332 oz
USHTS8541290095
Pd - Power Dissipation85 W
TradenameSTripFET
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel
Rise Time32 ns