参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage4 V
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current2.5 A
KRHTS8541299000
Vgs - Gate-Source Voltage- 30 V, + 30 V
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Typical Turn-On Delay Time8.5 ns
ImageSTMicroelectronics STD3N80K5
Product CategoryMOSFET
Rds On - Drain-Source Resistance2.8 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time20.5 ns
Maximum Operating Temperature+ 150 C
Package / CaseTO-252-3
DescriptionMOSFET N-CH 800V 2.8Ohm typ 2.5A Zener-protected
PackagingCut Tape
PackagingReel
PackagingMouseReel
Mounting StyleSMD/SMT
TARIC8541290000
BrandSTMicroelectronics
Qg - Gate Charge9.5 nC
Factory Pack Quantity2500
MXHTS85412999
Product TypeMOSFET
ManufacturerSTMicroelectronics
RoHS Details
SeriesSTD3N80K5
SubcategoryMOSFETs
USHTS8541290095
Channel ModeEnhancement
Fall Time25 ns
Unit Weight0.139332 oz
CNHTS8541290000
Pd - Power Dissipation60 W
TradenameMDmesh
Vds - Drain-Source Breakdown Voltage800 V
Number of Channels1 Channel
Rise Time7.5 ns