SI3459BDV-T1-GE3

SI3459BDV-T1-GE3

厂牌：VISHAY(威世)

包装：--

类目：元器件 > 分立器件 > MOSFET

编号：B000049463828

描述：MOSFET P-CH D-S 60V 6-TSOP

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商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min4 S

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage1 V

TechnologySi

Id - Continuous Drain Current2.9 A

Transistor PolarityP-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

Height1.1 mm

Length3.05 mm

KRHTS8541219000

Typical Turn-On Delay Time5 ns

ManufacturerVishay

Minimum Operating Temperature- 55 C

JPHTS8541210101

RoHS Details

CAHTS8541210000

Rds On - Drain-Source Resistance216 mOhms

Transistor Type1 P-Channel

Typical Turn-Off Delay Time18 ns

Factory Pack Quantity3000

Package / CaseTSOP-6

BrandVishay Semiconductors

TARIC8541290000

Maximum Operating Temperature+ 150 C

Width1.65 mm

Mounting StyleSMD/SMT

ImageVishay Semiconductors SI3459BDV-T1-GE3

PackagingReel

PackagingCut Tape

PackagingMouseReel

SubcategoryMOSFETs

Qg - Gate Charge7.7 nC

Product CategoryMOSFET

DescriptionMOSFET -60V Vds 20V Vgs TSOP-6

Product TypeMOSFET

MXHTS85412101

SeriesSI3

USHTS8541210095

Channel ModeEnhancement

Unit Weight0.000705 oz

Fall Time10 ns

CNHTS8541210000

Part # AliasesSI3459BDV-GE3

Pd - Power Dissipation3.3 W

TradenameTrenchFET

Vds - Drain-Source Breakdown Voltage60 V

Number of Channels1 Channel

Rise Time12 ns

Moisture Sensitivity Level1 (Unlimited)