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DMN1045UFR4-7
厂牌：DIODES(美台)
包装：--
类目：元器件 > 分立器件 > MOSFET
编号：B000049463937
描述：MOSFET N-CH 12V 3.2A X2-DFN1010
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage400 mV
TechnologySi
Id - Continuous Drain Current3.2 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 8 V, + 8 V
KRHTS8541219000
Typical Turn-On Delay Time7 ns
ManufacturerDiodes Incorporated
Minimum Operating Temperature- 55 C
JPHTS8541210101
RoHS Details
CAHTS8541210000
Rds On - Drain-Source Resistance25 MOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time93 ns
Package / CaseX2-DFN1010-3
Factory Pack Quantity3000
BrandDiodes Incorporated
TARIC8541210000
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
ImageDiodes Incorporated DMN1045UFR4-7
PackagingMouseReel
PackagingCut Tape
PackagingReel
SubcategoryMOSFETs
Qg - Gate Charge4.8 nC
Product CategoryMOSFET
DescriptionMOSFET N-Ch Enh Mode FET 12V 3.2A 8Vgss
Product TypeMOSFET
MXHTS85412101
SeriesDMN10
USHTS8541210095
Channel ModeEnhancement
Unit Weight0.158733 oz
Fall Time48 ns
CNHTS8541290000
Pd - Power Dissipation1.26 W
Vds - Drain-Source Breakdown Voltage12 V
Number of Channels1 Channel
Rise Time25 ns