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BSC093N04LSGATMA1
厂牌：Infineon(英飞凌)
包装：--
类目：元器件 > 分立器件 > MOSFET
编号：B000049464382
描述：Trans MOSFET N-CH 40V 13A 8-Pin TDSON EP T/R
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
KRHTS8541299000
JPHTS8541290100
Forward Transconductance - Min34 S
CAHTS8541290000
ImageInfineon Technologies BSC093N04LSGATMA1
Vgs th - Gate-Source Threshold Voltage1.2 V
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current49 A
DescriptionMOSFET N-Ch 40V 49A TDSON-8 OptiMOS 3
Vgs - Gate-Source Voltage- 20 V, + 20 V
Minimum Operating Temperature- 55 C
Height1.27 mm
Length5.9 mm
Typical Turn-On Delay Time3.6 ns
PackagingReel
PackagingMouseReel
PackagingCut Tape
Rds On - Drain-Source Resistance9.3 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time16 ns
Package / CasePG-TDSON-8
Product CategoryMOSFET
Maximum Operating Temperature+ 150 C
Factory Pack Quantity5000
Width5.15 mm
Mounting StyleSMD/SMT
Product TypeMOSFET
BrandInfineon Technologies
RoHS Details
MXHTS85412999
ManufacturerInfineon
TARIC8541290000
Qg - Gate Charge18 nC
SeriesOptiMOS 3
SubcategoryMOSFETs
Channel ModeEnhancement
USHTS8541290095
Fall Time2.8 ns
Unit Weight0.012804 oz
CNHTS8541290000
Pd - Power Dissipation35 W
TradenameOptiMOS
Vds - Drain-Source Breakdown Voltage40 V
Number of Channels1 Channel
Rise Time2.4 ns
Moisture Sensitivity Level1 (Unlimited)