参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.8 V
TechnologySi
Id - Continuous Drain Current317 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Width4.4 mm
Height15.65 mm
Rds On - Drain-Source Resistance1.6 mOhms
MXHTS85423102
Length10 mm
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Qg - Gate Charge324 nC
Mounting StyleThrough Hole
Package / CaseTO-220-3
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
CNHTS8541290000
ImageInfineon Technologies IRFB7434PBF
TARIC8542319000
PackagingTube
RoHS Details
Channel ModeEnhancement
Factory Pack Quantity1000
SubcategoryMOSFETs
Product CategoryMOSFET
BrandInfineon Technologies
Unit Weight0.211644 oz
Product TypeMOSFET
DescriptionMOSFET 40V 1.6mOhm 195A HEXFET 294W 216nC
ManufacturerInfineon
USHTS8541290095
Pd - Power Dissipation294 W
Vds - Drain-Source Breakdown Voltage40 V
TradenameStrongIRFET
Number of Channels1 Channel