参数项参数值
参数项参数值
DC Current Gain hFE Max450
Gain Bandwidth Product fT300 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current100 mA
ConfigurationSingle
Collector- Emitter Voltage VCEO Max45 V
Continuous Collector Current100 mA
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
QualificationAEC-Q101
Minimum Operating Temperature- 65 C
Collector-Emitter Saturation Voltage200 mV
RoHS Details
Package / CaseSOT-323-3
DC Collector/Base Gain hfe Min200
Factory Pack Quantity10000
ImageDiodes Incorporated AC847BWQ-13
PackagingReel
Maximum Operating Temperature+ 150 C
BrandDiodes Incorporated
Mounting StyleSMD/SMT
TARIC8541210000
ManufacturerDiodes Incorporated
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
DescriptionBipolar Transistors - BJT General Purpose Transistor
Product TypeBJTs - Bipolar Transistors
USHTS8541210095
Unit Weight0.000212 oz
Pd - Power Dissipation200 mW