参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current2.2 A
KRHTS8541299000
Vgs - Gate-Source Voltage- 30 V, + 30 V
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Typical Turn-On Delay Time8 ns
ImageSTMicroelectronics STD2N62K3
Product CategoryMOSFET
Rds On - Drain-Source Resistance3.6 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time21 ns
Maximum Operating Temperature+ 150 C
Package / CaseTO-252-3
DescriptionMOSFET N-Ch 620V 3 Ohm 2.2A SuperMESH 3
PackagingMouseReel
PackagingReel
PackagingCut Tape
Mounting StyleSMD/SMT
TARIC8541210000
Factory Pack Quantity2500
BrandSTMicroelectronics
Qg - Gate Charge15 nC
MXHTS85412101
Product TypeMOSFET
ManufacturerSTMicroelectronics
RoHS Details
SeriesSTD2N62K3
SubcategoryMOSFETs
USHTS8541290095
Channel ModeEnhancement
Fall Time22 ns
Unit Weight0.139332 oz
CNHTS8541210000
Pd - Power Dissipation45 W
TradenameMDmesh
Vds - Drain-Source Breakdown Voltage620 V
Number of Channels1 Channel
Rise Time4.4 ns