参数项参数值
参数项参数值
Forward Transconductance - Min498 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3.7 V
TechnologySi
Id - Continuous Drain Current195 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time20 ns
Width4.4 mm
Height15.65 mm
Rds On - Drain-Source Resistance2 MOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time118 ns
Length10 mm
Qg - Gate Charge186 nC
Package / CaseTO-220-3
Minimum Operating Temperature- 55 C
Mounting StyleThrough Hole
Maximum Operating Temperature+ 175 C
PackagingTube
RoHS Details
ImageInfineon Technologies IRFB7534PBF
Channel ModeEnhancement
SubcategoryMOSFETs
Fall Time93 ns
BrandInfineon Technologies
Factory Pack Quantity1000
Unit Weight0.211644 oz
Product CategoryMOSFET
Product TypeMOSFET
DescriptionMOSFET MOSFET N CH 60V 195A TO-220AB
ManufacturerInfineon
Pd - Power Dissipation294 W
Vds - Drain-Source Breakdown Voltage60 V
TradenameStrongIRFET
Number of Channels1 Channel
Rise Time134 ns