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商品参数
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参数项参数值
PackagingCut Tape (CT)
Package / Case8-PowerWDFN
Mounting TypeSurface Mount
Configuration2 N-Channel (Dual) Asymmetrical
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max3.1W
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C19A, 31A
Input Capacitance (Ciss) (Max) @ Vds820pF @ 15V
Rds On (Max) @ Id, Vgs5.2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs13nC @ 10V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id2.2V @ 250µA
Supplier Device Package8-DFN (5x6)