参数项参数值
参数项参数值
Forward Transconductance - Min7 S
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current1.7 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 8 V, + 8 V
Typical Turn-On Delay Time5 ns
Rds On - Drain-Source Resistance55 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time11 ns
Width1.4 mm
Height1.12 mm
Length2.9 mm
MXHTS85412101
Qg - Gate Charge5 nC
KRHTS8541219000
Package / CaseSSOT-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541210101
Minimum Operating Temperature- 55 C
ProductMOSFET Small Signal
CNHTS8541210000
CAHTS8541210000
Channel ModeEnhancement
Fall Time8.5 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541210000
BrandON Semiconductor / Fairchild
Unit Weight0.001058 oz
RoHS Details
SeriesFDN335N
Factory Pack Quantity3000
ImageON Semiconductor / Fairchild FDN335N
Pd - Power Dissipation500 mW
Product CategoryMOSFET
Part # AliasesFDN335N_NL
ManufacturerON Semiconductor
SubcategoryMOSFETs
Product TypeMOSFET
USHTS8541210095
Vds - Drain-Source Breakdown Voltage20 V
DescriptionMOSFET SSOT-3 N-CH 20V
TradenamePowerTrench
Number of Channels1 Channel
Rise Time8.5 ns
TypeMOSFET
Moisture Sensitivity Level1 (Unlimited)