参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current29 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 25 V, + 25 V
KRHTS8541299000
ManufacturerSTMicroelectronics
Minimum Operating Temperature- 55 C
JPHTS8541290100
CAHTS8541290000
Rds On - Drain-Source Resistance92 mOhms
Transistor Type1 N-Channel
Package / CaseTO-220-3
Factory Pack Quantity1000
BrandSTMicroelectronics
Maximum Operating Temperature+ 150 C
RoHS Details
Mounting StyleThrough Hole
PackagingTube
ImageSTMicroelectronics STP34NM60N
SubcategoryMOSFETs
Qg - Gate Charge84 nC
Product CategoryMOSFET
DescriptionMOSFET N-Ch 600V 0.092 Ohm MDmesh II 29A Switch
Product TypeMOSFET
MXHTS85411001
SeriesSTP34NM60N
USHTS8541290075
Channel ModeEnhancement
Unit Weight0.011640 oz
CNHTS8541290000
Pd - Power Dissipation210 W
TradenameMDmesh
Vds - Drain-Source Breakdown Voltage600 V
Number of Channels1 Channel