参数项参数值
参数项参数值
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO- 50 V
Maximum DC Collector Current- 100 mA
Collector- Emitter Voltage VCEO Max- 40 V
Continuous Collector Current- 100 mA
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
QualificationAEC-Q101
Collector-Emitter Saturation Voltage- 200 mV
DC Collector/Base Gain hfe Min120
MXHTS85412101
KRHTS8541219000
Package / CaseDFN1006-3
Mounting StyleSMD/SMT
JPHTS8541210101
Minimum Operating Temperature- 55 C
CAHTS8541210000
Maximum Operating Temperature+ 150 C
CNHTS8541210000
PackagingMouseReel
PackagingCut Tape
PackagingReel
ImageDiodes Incorporated 2DA1774QLP-7B
TARIC8541210000
RoHS Details
Unit Weight0.282192 oz
Series2DA17
Factory Pack Quantity10000
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation250 mW
BrandDiodes Incorporated
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerDiodes Incorporated
DescriptionBipolar Transistors - BJT SS Mid-Perf Transist X1-DFN1006-3,10K
USHTS8541210095