参数项参数值
参数项参数值
Forward Transconductance - Min58 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage4 V
TechnologySi
Id - Continuous Drain Current119 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Width6.22 mm
Height2.3 mm
Rds On - Drain-Source Resistance5.5 mOhms
Transistor Type1 N-Channel
Length6.5 mm
Qg - Gate Charge89 nC
Package / CaseTO-252-3
Minimum Operating Temperature- 55 C
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 175 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
RoHS Details
ImageInfineon / IR IRFR4104TRPBF
Channel ModeEnhancement
SubcategoryMOSFETs
Fall Time36 ns
BrandInfineon / IR
Factory Pack Quantity2000
Unit Weight0.139332 oz
Product CategoryMOSFET
Product TypeMOSFET
DescriptionMOSFET MOSFT 40V 119A 5.5mOhm 59nC Qg
ManufacturerInfineon
Pd - Power Dissipation140 W
Vds - Drain-Source Breakdown Voltage40 V
Number of Channels1 Channel
Rise Time69 ns