参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min35 S
TechnologySi
Vgs th - Gate-Source Threshold Voltage1 V
Transistor PolarityP-Channel
Id - Continuous Drain Current38 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
KRHTS8541299000
QualificationAEC-Q101
Minimum Operating Temperature- 55 C
Length6.73 mm
Height2.38 mm
JPHTS8541290100
Typical Turn-On Delay Time11 ns
CAHTS8541290000
Rds On - Drain-Source Resistance40 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time78 ns
Package / CaseTO-252-3
ImageVishay / Siliconix SQD40P10-40L_GE3
RoHS Details
PackagingCut Tape
PackagingMouseReel
PackagingReel
Width6.22 mm
Maximum Operating Temperature+ 175 C
TARIC8541210000
BrandVishay / Siliconix
Mounting StyleSMD/SMT
Product CategoryMOSFET
SubcategoryMOSFETs
DescriptionMOSFET -100V -30A 136W AEC-Q101 Qualified
ManufacturerVishay
Factory Pack Quantity2000
Qg - Gate Charge96 nC
MXHTS85412999
SeriesSQ
Product TypeMOSFET
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.011993 oz
Fall Time15 ns
CNHTS8541290000
Pd - Power Dissipation136 W
TradenameTrenchFET
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel
Rise Time11 ns