参数项参数值
参数项参数值
Forward Transconductance - Min50 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.3 V
TechnologySi
Id - Continuous Drain Current100 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time14 ns
Rds On - Drain-Source Resistance3.6 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time38 ns
Width5.15 mm
Height1.27 mm
Length5.9 mm
Qg - Gate Charge63.4 nC
Package / CasePG-TDSON-8
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
Minimum Operating Temperature- 55 C
Fall Time10 ns
PackagingReel
PackagingCut Tape
PackagingMouseReel
Unit Weight0.004223 oz
RoHS Details
SeriesOptiMOS 3
Part # AliasesBSC36NE7NS3GXT SP000907920 BSC036NE7NS3GATMA1
ImageInfineon Technologies BSC036NE7NS3 G
BrandInfineon Technologies
Factory Pack Quantity5000
Product TypeMOSFET
Product CategoryMOSFET
ManufacturerInfineon
SubcategoryMOSFETs
Vds - Drain-Source Breakdown Voltage75 V
Number of Channels1 Channel
Rise Time18 ns
TradenameOptiMOS
DescriptionMOSFET N-Ch 75V 100A TDSON-8