参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3 V
TechnologySi
Id - Continuous Drain Current1.9 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Rds On - Drain-Source Resistance280 mOhms
Transistor Type1 N-Channel
Width3.9 mm
Height1.75 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge10 nC
Package / CaseSO-8
Mounting StyleSMD/SMT
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
ImageInfineon / IR IRF7465TRPBF
RoHS Details
Unit Weight0.019048 oz
Factory Pack Quantity4000
Product TypeMOSFET
Pd - Power Dissipation2.5 W
BrandInfineon / IR
Product CategoryMOSFET
ManufacturerInfineon
SubcategoryMOSFETs
DescriptionMOSFET MOSFT 150V 1.9A 280mOhm 10nC
Vds - Drain-Source Breakdown Voltage150 V
USHTS8541290095
Number of Channels1 Channel