在线商城 
ZXMN3G32DN8TA
厂牌：DIODES(美台)
包装：--
类目：元器件 > 分立器件 > MOSFET
编号：B000049467184
描述：MOSFET 30V Dual N-Channel Enhance. Mode MOSFET
商品参数
参数项参数值
参数项参数值
ConfigurationDual
Id - Continuous Drain Current7.1 A
Transistor PolarityN-Channel
TechnologySi
Width4 mm
Rds On - Drain-Source Resistance28 mOhms
Transistor Type2 N-Channel
Typical Turn-Off Delay Time14 ns
Height1.5 mm
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time2.5 ns
RoHS Details
Length5 mm
MXHTS85412101
ImageDiodes Incorporated ZXMN3G32DN8TA
KRHTS8541219000
Mounting StyleSMD/SMT
Product TypeMOSFET
Qg - Gate Charge10.5 nC
JPHTS8541210101
DescriptionMOSFET 30V Dual N-Channel Enhance. Mode MOSFET
Package / CaseSO-8
CAHTS8541210000
USHTS8541210095
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541210000
CNHTS8541210000
Channel ModeEnhancement
ManufacturerDiodes Incorporated
SeriesZXMN3
SubcategoryMOSFETs
Factory Pack Quantity500
Product CategoryMOSFET
Fall Time9.7 ns
Unit Weight0.002610 oz
BrandDiodes Incorporated
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels2 Channel
Rise Time3.1 ns