参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.8 V
TechnologySi
Id - Continuous Drain Current100 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 12 V, + 12 V
Width5 mm
Rds On - Drain-Source Resistance990 Ohms
Transistor Type1 N-Channel
Height0.83 mm
Length6 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge155 nC
Mounting StyleSMD/SMT
Package / CasePQFN-8
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
CNHTS8541290000
BrandInfineon / IR
Factory Pack Quantity4000
ManufacturerInfineon
Channel ModeEnhancement
TARIC8541290000
Product CategoryMOSFET
RoHS Details
DescriptionMOSFET 20V SINGLE N-CH 1.2mOhms 155nC
ImageInfineon / IR IRFH6200TRPBF
Product TypeMOSFET
SubcategoryMOSFETs
Unit Weight0.009635 oz
USHTS8541290095
Pd - Power Dissipation250 W
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel