参数项参数值
参数项参数值
Gain Bandwidth Product fT300 MHz
Collector- Base Voltage VCBO30 V
Maximum DC Collector Current200 mA
Collector- Emitter Voltage VCEO Max30 V
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
MXHTS85412101
Collector-Emitter Saturation Voltage600 mV
Width1.35 mm
DC Collector/Base Gain hfe Min420 at 2 mA, 5 V
Height1 mm
Length2.2 mm
KRHTS8541219000
Package / CaseSOT-323-3
CNHTS8541210000
JPHTS8541210101
Mounting StyleSMD/SMT
CAHTS8541210000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 65 C
PackagingMouseReel
PackagingReel
PackagingCut Tape
ImageDiodes Incorporated BC848CW-7-F
TARIC8541210000
RoHS Details
Factory Pack Quantity3000
SeriesBC848C
ManufacturerDiodes Incorporated
Unit Weight0.000176 oz
BrandDiodes Incorporated
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT NPN BIPOLAR
Product CategoryBipolar Transistors - BJT
Pd - Power Dissipation200 mW
SubcategoryTransistors
USHTS8541210095
Moisture Sensitivity Level1 (Unlimited)