参数项参数值
参数项参数值
Forward Transconductance - Min13 S
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current2.8 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 8 V, + 8 V
Typical Turn-On Delay Time7.4 ns
Rds On - Drain-Source Resistance48 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time28.1 ns
Minimum Operating Temperature- 55 C
Mounting StyleSMD/SMT
Package / CaseSOT-363-6
Maximum Operating Temperature+ 150 C
PackagingMouseReel
PackagingReel
PackagingCut Tape
Qg - Gate Charge7 nC
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
Factory Pack Quantity3000
ImageDiodes Incorporated DMN2075UDW-7
Product CategoryMOSFET
RoHS Details
SeriesDMN2075
DescriptionMOSFET MOSFET BVDSS: 8V-24V SOT363,3K
Product TypeMOSFET
SubcategoryMOSFETs
Channel ModeEnhancement
Fall Time6.7 ns
Unit Weight0.000212 oz
Pd - Power Dissipation500 mW
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel
Rise Time9.8 ns