参数项参数值
参数项参数值
ConfigurationSingle
Id - Continuous Drain Current2.6 A
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage3 V
TechnologySi
Height2.3 mm
Rds On - Drain-Source Resistance3 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time23 ns
Width6.22 mm
Vgs - Gate-Source Voltage- 20 V, + 20 V
Package / CaseTO-252-3
Typical Turn-On Delay Time7.3 ns
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
Length6.5 mm
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageInfineon Technologies IPD50R3K0CEAUMA1
MXHTS85412999
KRHTS8541299000
DescriptionMOSFET CONSUMER
CAHTS8541290000
ManufacturerInfineon
Qg - Gate Charge4.3 nC
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Moisture SensitiveYes
TARIC8541290000
CNHTS8541290000
Channel ModeEnhancement
Factory Pack Quantity2500
RoHS Details
Unit Weight0.011993 oz
SeriesIPD50R3
SubcategoryMOSFETs
Fall Time49 ns
BrandInfineon Technologies
Product CategoryMOSFET
Product TypeMOSFET
USHTS8541290095
Pd - Power Dissipation26 W
Part # AliasesIPD50R3K0CE SP001396826
Vds - Drain-Source Breakdown Voltage500 V
TradenameCoolMOS
Number of Channels1 Channel
Rise Time5.8 ns