BSC196N10NSGATMA1

厂牌：Infineon(英飞凌)

包装：--

类目：元器件 > 分立器件 > MOSFET

编号：B000049467975

描述：N-Channel 100 V 19.6 mOhm OptiMOS™2 Power-Transistor - PG-TDSON-8

商品参数

参数项参数值

PackagingTape & Reel (TR)

Package / Case8-PowerTDFN

Mounting TypeSurface Mount

Operating Temperature-55°C ~ 150°C (TJ)

TechnologyMOSFET (Metal Oxide)

FET TypeN-Channel

Current - Continuous Drain (Id) @ 25°C8.5A (Ta), 45A (Tc)

Rds On (Max) @ Id, Vgs19.6mOhm @ 45A, 10V

FET Feature-

Power Dissipation (Max)78W (Tc)

Vgs(th) (Max) @ Id4V @ 42µA

Supplier Device PackagePG-TDSON-8-1

Drive Voltage (Max Rds On, Min Rds On)10V

Vgs (Max)±20V

Drain to Source Voltage (Vdss)100 V

Gate Charge (Qg) (Max) @ Vgs34 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds2300 pF @ 50 V